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Ordering number : ENN6559
5LN01SP
N-Channel Silicon MOSFET
5LN01SP
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2180
[5LN01SP]
4.0
3.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
2.2
0.4 0.5
0.6
1.8 15.0
0.4
0.4
1 2 1.3
0.7
3
1.3
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Source 2 : Drain 3 : Gate SANYO : SPA
Ratings 50 ±10 0.1 0.4 0.25 150 --55 to +150 Unit V V A A W °C °C
3.0 3.
5LN01SP Datasheet
