Description | Ordering number : ENN6560 5LN01SS N-Channel Silicon MOSFET 5LN01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage ... |
Features |
• • • Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) All... |
Datasheet | 5LN01SS Datasheet - 43.75KB |