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5LN01SS - Ultrahigh-Speed Switching Applications

Features

  • Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Co.

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Other Datasheets by SANYO (now Panasonic)

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5LN01SP Ultrahigh-Speed Switching Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6560 5LN01SS N-Channel Silicon MOSFET 5LN01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2179 [5LN01SS] 1.4 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 1 : Gate 2 : Source 3 : Drain 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions SANYO : SSFP Ratings 50 ±10 0.1 0.4 0.
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