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5LP01SS - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive.
  • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device.

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Other Datasheets by SANYO (now Panasonic)

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5LP01S Ultrahigh-Speed Switching Applications
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5LP01N P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6622B 5LP01SS SANYO Semiconductors DATA SHEET 5LP01SS Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive • Halogen free compliance P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --50 ±10 --0.07 --0.28 0.15 150 --55 to +150 Unit V V A A W °C °C LOT No. LOT No. Package Dimensions unit : mm (typ) 7029A-003 1.4 0.3 0.8 0.