* Adoption of FBET process.
* High breakdown voltage.
* Excellent linearity of h FE and small C ob.
* Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Rati
A1207
Sanyo Semicon Device
186.88 KB
2sa1207.
www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Ap.
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