* Adoption of FBET process.
* High breakdown voltage.
* Excellent linearity of hFE and small Cob.
* Fast swtching speed. Package Dimensions unit:mm 2006A [2SA1208/2SC2910] ( ) : 2SA1208 Specifications EIAJ:SC-51 SANYO:MP B:Base C:Collector E:Emitter Absolute Maximum Ratings at T
A1208
Sanyo Semicon Device
122.67 KB
2sa1208.
Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications F.
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