A1770 - 2SA1770

Sanyo Semicon Device

Datasheet Details

Adoption of MBIT process.
High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tst.

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Published: Apr 22, 2014 |