* 1.0 4.0 1.0 3.3 Adoption of MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 4.8 1.7 2.4 1
A2037
Sanyo Semicon Device
74.24 KB
2sa2037.
www.DataSheet4U.com Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter A.
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