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Sanyo Electric Components Datasheet

A2112 Datasheet

2SA2112

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Ordering number : ENN7379
2SA2112
PNP Epitaxial Planar Silicon Transistors
2SA2112
High Current Switching Applications
Applications
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
w w w . D a t aFSeahteueret s4 U . c o m
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Package Dimensions
unit : mm
2064A
[2SA2112]
2.5
1.45
6.9 1.0
0.9
1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
2.54
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=--40V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
0.6
0.5
23
2.54
0.45
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
--50
--50
--50
--6
--3
--6
--600
1
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
min
200
Ratings
typ
max
Unit
--1 µA
--1 µA
560
390 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503 TS IM TA-3749 No.7379-1/4


Sanyo Electric Components Datasheet

A2112 Datasheet

2SA2112

No Preview Available !

2SA2112
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
www.DataSheet4U.com
Switching Time Test Circuit
Symbol
Conditions
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--2A, IB=--100mA
IC=--2A, IB=--100mA
IC=--10µA, IE=0
IC=--100µA, RBE=0
IC=--1mA, RBE=
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
PW=20µs
D.C.1%
INPUT
VR
IB2
IB1
RB
OUTPUT
RL
50
++
100µF
470µF
VBE=5V
VCC= --25V
IC= --10IB1=10IB2= --1A
min
--50
--50
--50
--6
Ratings
typ
24
--135
--260
--0.88
30
230
18
max
--270
--700
--1.2
Unit
pF
mV
mV
V
V
V
V
V
ns
ns
ns
IC -- VCE
--2.0
--40mA --30mA
--20mA
--1.6
--8mA --10mA
--1.2 --6mA
--4mA
--0.8
--2mA
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--3.0
VCE= --2V
IB=0
--1.0
IT05441
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V IT05443
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
1000
7
5
3
2
--10mA
--12mA
IC -- VCE
--8mA
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0
--4 --8 --12 --16 --20
Collector-to-Emitter Voltage, VCE -- V IT05442
hFE -- IC
VCE= --2V
Ta=75°C
25°C
--25°C
100
7
5
3
--0.01
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT05444
No.7379-2/4


Part Number A2112
Description 2SA2112
Maker Sanyo Semicon Device
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A2112 Datasheet PDF






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