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A2112 - 2SA2112

Key Features

  • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction T.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
A2117 PNP / NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications • Package Dimensions unit : mm 2064A [2SA2112] 2.5 1.45 6.9 1.0 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. w w w . D a t a S h e e t 4 U . c o m Features • • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.