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A2169 - 2SA2169

Key Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions R.

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Full PDF Text Transcription for A2169 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for A2169. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 Applications • High-Current Switching App...

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ransistors 2SA2169 / 2SC6017 Applications • High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions Ratings (-50)100 (--)50 Unit V V

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