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A2210 - 2SA2210

Features

  • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 -.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
A2222 PNP Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr www.DataSheet4U.com Ordering number : ENA0667 2SA2210 SANYO Semiconductors DATA SHEET 2SA2210 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
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