Ordering number : ENA1319
N-Channel Silicon MOSFET
General-Purpose Switching Device
• Low ON-resistance.
• Large current.
• Slim package.
• 4.5V drive.
• Halogen free compliance.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=50μH, IAV=33A
*2 L≤50μH, Single pulse
Electrical Characteristics at Ta=25°C
PW≤10μs, duty cycle≤1%
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : ATP207
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91708PA TI IM TC-00001572 No. A1319-1/4
Datasheet pdf - http://www.DataSheet4U.net/