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Sanyo Electric Components Datasheet

ATP213 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1526
ATP213
SANYO Semiconductors
DATA SHEET
ATP213
Features
Low ON-resistance.
Large current.
Slim package.
4V drive.
Halogen free compliance.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=25A
*2 L100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Electrical Characteristics at Ta=25°C
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
60
±20
50
150
50
150
--55 to +150
37
25
Unit
V
V
A
A
W
°C
°C
mJ
A
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : ATP213
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
min
60
Ratings
typ
max
1
±10
Unit
V
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
80509PA TK IM TC-00002021 No. A1526-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ATP213 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
ATP213
Continued from preceding page.
Parameter
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=25A
ID=25A, VGS=10V
ID=13A, VGS=4.5V
ID=7A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=30V, VGS=10V, ID=50A
VDS=30V, VGS=10V, ID=50A
VDS=30V, VGS=10V, ID=50A
IS=50A, VGS=0V
Package Dimensions
unit : mm (typ)
7057-001
6.5 1.5 4.6
2.6
0.4 0.4
4
min
1.2
Ratings
typ
55
12
15
17
3150
310
190
23
170
230
150
58
10.5
12.5
1.01
max
2.6
16
21
26
1.2
Unit
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=25A
RL=1.2Ω
D VOUT
ATP213
P.G 50Ω S
No. A1526-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ATP213
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ATP213 Datasheet PDF





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