* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity.
* Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Coll
B1140
Sanyo Semicon Device
66.81 KB
2sb1140.
w w w . D a t a S h e e t 4 U . n e t Ordering number:ENN2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching A.
📁 Related Datasheet
B1141 2SB1141 (Sanyo)
B1143 2SB1143 (Sanyo Semicon Device)
B1144 2SB1144 (Sanyo Semicon Device)
B1148 2SB1148 (Panasonic Semiconductor)
B1149 2SB1149 (SavantIC)
B110 Low Voltage X-Ray Tube (Ferranti)
B1100 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100 SCHOTTKY BARRIER RECTIFIERS (CTC)
B1100B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B1100BQ 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
