* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB985/2SD1347] ( ) : 2SB985 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E
B985
Sanyo Semicon Device
107.50 KB
Pnp epitaxial planar silicon transistors.
Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations Power supplie.
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