* Adoption of FBET and MBIT processes.
* Low saturation voltage.
* High current capacity and wide ASO. Package Dimensions unit:mm 2009B [2SB986/2SD1348] ( ) : 2SB986 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
B986
Sanyo Semicon Device
123.99 KB
2sb986.
Ordering number:1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Power .
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