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Sanyo Electric Components Datasheet

C2362 Datasheet

2SC2362

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Ordering number:ENN572E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions
unit:mm
2003B
[2SA1016, 1016K/2SC2362, 2362K]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows :
Rank
F
G
H
hFE 160 to 320 280 to 560 480 to 960
123
1.3 1.3
1 : Emitter
2 : Collecor
3 : Base
SANYO : NP
2SA1016, 2SC2362
(–)120
(–)100
2SA1016K,
2SC2362K
(–)150
(–)120
(–)5
(–)50
(–)100
400
125
–55 to +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
(–)1.0 µA
(–)1.0 µA
160*
960*
(110)
130
MHz
(2.2)
1.8
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4


Sanyo Electric Components Datasheet

C2362 Datasheet

2SC2362

No Preview Available !

2SA1016, 1016K/2SC2362, 2362K
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Noise Level
Noise Peak Level
Symbol
Conditions
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VNO(ave)
VNO(peak)
IC=(–)10mA, IB=(–)1mA
IC=(–)10µA, IE=0 [A1016, C2362]
IC=(–)10µA, IE=0 [A1016K, C2362K]
IC=(–)1mA, RBE=[A1016, C2362]
IC=(–)1mA, RBE=[A1016K, C2362K]
IE=(–)10µA, IC=0
VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz
VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz
Ratings
min typ
(–)120
(–)150
(–)100
(–)120
(–)5
max
(–)0.5
35
200
Unit
V
V
V
V
V
V
mV
mV
--12 IC -- VCE
2SA1016, 1016K
--10
--8
--350µA--300µA--250µA
--200µA
--6 --150µA
--4 --100µA
--50µA
--2
IB=0
0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR02951
IB -- VBE
--100
2SA1016, 1016K
VCE=--5V
--80
--60
--40
--20
00
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE – V ITR02953
fT -- IC
5
2SA1016, 1016K
VCE=--6V
3
2
100
7
5
3
2
1.0
23
5 7 10
2
Collector Current, IC – mA
35
ITR02955
IC -- VCE
12
2SC2362, 2362K
10
250µA
8 200µA
6 150µA
4 100µA
2 50µA
IB=0
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR02952
IB -- VBE
100
2SC2362, 2362K
VCE=5V
80
60
40
20
0
0
0.2 0.4
0.6 0.8
1.0
Base-to-Emitter Voltage, VBE – V ITR02954
fT -- IC
5
2SC2362, 2362K
VCE=6V
3
2
100
7
5
3
2
1.0
23
5 7 10
2
Collector Current, IC – mA
35
ITR02956
No.572-2/4


Part Number C2362
Description 2SC2362
Maker Sanyo Semicon Device
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C2362 Datasheet PDF






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