C2362
Ordering number:ENN572E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1016, 1016K/2SC2362, 2362K
High-Voltage Low-Noise Amp Applications
Package Dimensions unit:mm 2003B
[2SA1016, 1016K/2SC2362, 2362K]
5.0 4.0 4.0
0.45 0.5 0.45 0.44
0.6 2.0 14.0 5.0
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO h FE f T
VCB=(- )80V, IE=0 VEB=(- )4V, IC=0 VCE=(- )6V, IC=(- )1m A
VCE=(- )6V, IC=(- )1m A
Output Capacitance
Cob VCB=(- )10V, f=1MHz
- : The 2SA1016, K/2SC2362, K are classified by 1m A h FE as follows :
Rank
H h FE 160 to 320 280 to 560 480 to...
