* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
C3998
Sanyo Semicon Device
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2sc3998.
Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Di.
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