• Part: C4106
  • Description: NPN Triple Diffused Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 90.06 KB
Download C4106 Datasheet PDF
SANYO
C4106
Features - High breakdown voltage and high reliability. - Fast switching speed. - Wide ASO. - Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 4.5 1.3 2.7 6.3 15.1 18.0 5.6 2.7 14.0 Specifications 0.8 123 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Ratings Unit 500 V 400 V 7V 7A 14 A 3A 1.75 W 50 W 150...