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C4159 - 2SC4159

Key Features

  • Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (.
  • )180 (.
  • )160 (.
  • )6 (.
  • )1.5 (.
  • )3 Unit.

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Full PDF Text Transcription for C4159 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C4159. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:EN2535 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications ·...

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159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Hamamatsu Corporation Logo C4159 Low noise amplifier Hamamatsu Corporation

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