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C5240 - 2SC5240

Features

  • High breakdown voltage (VCBO=1000V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 2.7 3.0 8.8 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Tc=25°C Junction Temp.

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Full PDF Text Transcription

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Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 2.7 3.0 8.8 1.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Tc=25°C Junction Temperature Tj Storage Temperature Tstg 1.2 0.8 2 13 2.55 2.55 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Ratings 1000 450 9 5 10 1.
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