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C5291 - 2SC5291

Key Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity.
  • Can be provided in taping.
  • 9.5mm onboard mounting height. Package Dimensions unit : mm 2084B [2SC5291] 10.5 4.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature S.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C5296 NPN Triple Diffused Planar Silicon Transistor
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C5227 2SC5227
C5240 2SC5240

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Can be provided in taping. • 9.5mm onboard mounting height. Package Dimensions unit : mm 2084B [2SC5291] 10.5 4.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C 2.