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C5611 - 2SC5611

Features

  • Low collector-to-emitter saturation voltage.
  • Excellent dependence of hFE on current.
  • High-speed switching.
  • Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note.
  • ( ) : 2SA2023 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w w w Ordering . D a t number:ENN6336 a S h e e t 4 U . c o m PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobes, flash, fluorescent lamp lighting circuit). · Power amplifier (high-power car stereo, motor control). · High-speed switching (switching regulater, driver circuit). Package Dimensions unit:mm 2165 [2SA2023/2SC5611] 8.0 1.0 4.0 1.0 1.4 3.3 3.0 Features · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.
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