CPH3122
Features
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Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.
Specifications ( ) : CPH3122
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.9 150 --55 to +150 Unit V V V A A m A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE f T Cob Conditions VCB=(--)30V, IE=0 VEB=(-)4V, IC=0 VCE=(--)2V, IC=(-)500m A VCE=(--)10V,...
