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Sanyo Electric Components Datasheet

CPH3223 Datasheet

(CPH3123 / CPH3223) PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENN7221A
CPH3123 / CPH3223
PNP / NPN Epitaxial Planar Silicon Transistors
CPH3123 / CPH3223 High-Current Switching
Applications
Applications
DC-DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation.
Specifications ( ) : CPH3123
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
(--50)100
(--50)100
(--)50
(--)6
(--)3
(--)6
(--)600
0.9
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : CPH3123 : AU, CPH3223 : CU
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
min
200
Ratings
typ
max
Unit
(--)1 µA
(--)1 µA
560
(390)380
MHz
(24)13
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1504 TS IM TB-00000301 / 71002 TS IM TA-100095, 3619 No.7221-1/5
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

CPH3223 Datasheet

(CPH3123 / CPH3223) PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

www.DataSheet.co.kr
CPH3123 / CPH3223
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--)1A, IB=(--)50mA
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
IC=(--)10µA, IE=0
IC=(--)100µA, RBE=0
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ max
(--115)90 (--230)130
(--240)160 (--650)240
(--)0.88 (--)1.2
(--50)100
(--50)100
(--)50
(--)6
(30)35
(230)300
(18)25
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2150A
2.9
0.4
3
0.15
0.05
12
1.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50
+
100µF
VBE= --5V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
+
470µF
VCC=25V
--2.0
CPH3123
--1.8
--1.6
--1.4
--1.2
IC -- VCE
--40mA --30mA
--20mA
--1--08mmAA
--6mA
--1.0 --4mA
--0.8
--0.6 --2mA
--0.4
--0.2
0
0
--3.0
--2.5
IB=0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE -- V IT04564
IC -- VBE
CPH3123
VCE= --2V
5.0
CPH3223
4.5
4.0
3.5
IC -- VCE
100mA
80mA
60mA
40mA
3.0 20mA
2.5
10mA
2.0
1.5 5mA
1.0
0.5
0 IB=0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT04565
IC -- VBE
3.0
CPH3223
VCE=2V
2.5
--2.0 2.0
--1.5 1.5
--1.0 1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V IT04566
0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04567
No.7221-2/5
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH3223
Description (CPH3123 / CPH3223) PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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CPH3223 Datasheet PDF





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