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Sanyo Electric Components Datasheet

CPH3247 Datasheet

NPN Epitaxial Planar Silicon Transistor

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Ordering number : ENA0400
CPH3247
SANYO Semiconductors
DATA SHEET
CPH3247
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm).
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
120
120
80
6.5
2.5
4
500
0.9
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : DS
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=70V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
min
300
Ratings
typ
max
Unit
1 µA
1 µA
600
350 MHz
14 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002342 No. A0400-1/4


Sanyo Electric Components Datasheet

CPH3247 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
CPH3247
Symbol
Conditions
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0
IC=1mA, RBE=
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
80
6.5
Ratings
typ
90
80
0.84
40
920
32
max
135
120
1.2
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7015A-003
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT VR10
IB1
IB2
RB
50
+
100µF
VBE= --5V
10IB1= --10IB2=IC=0.5A
OUTPUT
RL
+
470µF
VCC=40V
IC -- VCE
2.0
1.6 20mA
1.2 10mA
5mA
0.8
2mA
1mA
0.4
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V IT11004
2.0
VCE=5V
1.8
IC -- VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT11005
No. A0400-2/4


Part Number CPH3247
Description NPN Epitaxial Planar Silicon Transistor
Maker Sanyo Semicon Device
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