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CPH3247 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
CPH3240 PNP / NPN Epitaxial Planar Silicon Transistors
CPH3243 PNP / NPN Epitaxial Planar Silicon Transistors
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CPH3245 Epitaxial Planar Silicon Transistors
CPH3246 NPN Epitaxial Planar Silicon Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0400 CPH3247 SANYO Semiconductors DATA SHEET CPH3247 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation.