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Sanyo Electric Components Datasheet

CPH3249 Datasheet

NPN Triple Diffused Planar Silicon Transistor

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Ordering number : ENA0920
CPH3249
SANYO Semiconductors
DATA SHEET
CPH3249
Features
High breakdown voltage.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, duty cycle10%
Mounted on a ceramic board (600mm20.8mm)
Ratings
700
350
8
1
2
0.5
0.9
150
--55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
Conditions
VCB=350V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
min
100
10
60
Ratings
typ
max
10
10
200
Unit
µA
µA
20 MHz
8 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907CB TI IM TC-00000870 No. A0920-1/4


Sanyo Electric Components Datasheet

CPH3249 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

CPH3249
Continued from preceding page.
Parameter
Symbol
Conditions
min
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=0.5A, IB=0.1A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=0.5A, IB=0.1A
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=1mA, IE=0A
700
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=5mA, RBE=
350
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=1mA, IC=0A
8
Turn-ON Time
Storage Time
ton IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V
tstg IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V
Fall Time
tf IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400, VCC=200V
Note : Since the above stated product is a high-voltage device, so please pay attention to its reliability when in use.
Ratings
typ
max
0.8
1.5
1.0
2.5
0.3
Unit
V
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7015A-005
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : BaseEmitter
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL
100
+
470µF
VCC=200V
IC -- VCE
1.0
150mA
0.9
90mA 80mA 70mA
0.8 100mA
0.7
0.6
0.5 30mA
20mA
0.4
10mA
0.3
60mA 50mA 40mA
0.2
0.1
0
0
1000
7
5
3
2
100
7
5
3
2
IB=0mA
12345678
Collector-to-Emitter Voltage, VCE -- V IT12843
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
10
7
5
3
2
1.0
0.001
23
5 7 0.01 2 3 5 7 0.1 2 3
Collector Current, IC -- A
5 7 1.0
IT12845
IC -- VBE
1.0
VCE=5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT12844
hFE -- IC
3
2
100
7 1V
5
3
2
10
7
5
3
0.001
23
5 7 0.01 2 3 5 7 0.1 2 3
Collector Current, IC -- A
5 7 1.0
IT12846
No. A0920-2/4


Part Number CPH3249
Description NPN Triple Diffused Planar Silicon Transistor
Maker Sanyo Semicon Device
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CPH3249 Datasheet PDF





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