CPH3249 Datasheet | SANYO

Features - - - - NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings 700 350 8 1 2 0.5 0.9 150 --55 to +150 Unit V V V A A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 h FE3 f T Cob Conditions VCB=350V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=5V, IC=1m A VCE=10V, IC=0.1A VCB=10V, f=1MHz 100 10 60 20 8 MHz p F Ratings min typ max 10 10 200 Unit µA µA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended...