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CPH5508 - High-Current Switching Applications

Features

  • 0.15 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 0.1 0.1 200 420 6 560 MHz pF Unit µA µA Note : The specifications shown above are for each individual transistor. Marking : EH Continued on next page. Any and all SANYO products described or containe.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7170 CPH5508 NPN Epitaxial Planar Silicon Transistor CPH5508 High-Current Switching Applications Applications • Package Dimensions unit : mm 2162 [CPH5508] 2.9 5 4 3 Inverters, Relay drivers, Lamp drivers, Motor drivers, Strobes. 0.6 • • • Composite type with 2 NPN transistors in one package facilitating high-density mounting. The CPH5508 is composed of 2 CPH3216 equivaient chips . Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). 1 0.95 2 0.4 0.6 1.6 2.8 0.
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