* 0.15 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 0.
CPH5508
Sanyo Semicon Device
62.02 KB
High-current switching applications.
www.DataSheet4U.com Ordering number : ENN7170 CPH5508 NPN Epitaxial Planar Silicon Transistor CPH5508 High-Current Switching Applications Applicati.
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