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Sanyo Electric Components Datasheet

CPH5516 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENA0196
CPH5516
SANYO Semiconductors
DATA SHEET
CPH5516
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive.
Features
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting.
Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
PW1s
Mounted on a ceramic board (600mm2!0.8mm)
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
(--30) 40
(--) 30
(--) 5
(--) 2
(--) 6
(--) 400
0.9
1.2
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwideth Product
Output Capacitance
Marking : EK
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--) 30V, IE=0A
VEB=(--) 4V, IC=0A
VCE=(--) 2V, IC=(--) 100mA
VCE=(--) 10V, IC=(--) 300mA
VCB=(--) 10V, f=1MHz
Ratings
min typ max
Unit
(--) 0.1 µA
(--) 0.1 µA
200 560
(440) 400
MHz
(17) 12
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 33106EA MS IM TB-00002176 No. A0196-1/5
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Sanyo Electric Components Datasheet

CPH5516 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

www.DataSheet.co.kr
CPH5516
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--) 1.5A, IB=(--) 75mA
IC=(--) 1.5A, IB=(--) 75mA
IC=(--) 10µA, IE=0A
IC=(--) 1mA, RBE=
IE=(--) 10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ max
(--170) 160 (--260) 240
(--) 0.94 (--) 1.2
(--30) 40
(--) 30
(--) 5
(45) 40
(200) 350
(23) 30
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7017-009
0.4
5 43
0.15
0.05
1
0.95
2.9
2
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
SANYO : CPH5
Electrical Connection
543
12
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
Top view
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL=24
50
++
100µF
470µF
VBE= --5V
VCC=12V
IC=20IB1= --20IB2=500mA
For PNP, the polarity is reversed.
IC -- VCE
[PNP]
--2.0
--1.8
--40mA--30mA
--20mA
--15mA
--1.6
--10mA
--1.4
--8mA
--1.2
--6mA
--1.0
--0.8 --4mA
--0.6
--2mA
--0.4
--0.2
0
0
IB=0mA
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT08907
IC -- VCE
[NPN]
2.0
1.8
1.6
15m2A0mA
10mA
8mA
6mA
1.4
1.2 4mA
1.0
0.8
2mA
0.6
0.4
0.2
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT08908
No. A0196-2/5
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH5516
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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CPH5516 Datasheet PDF






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