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Sanyo Electric Components Datasheet

CPH5518 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENA0492
CPH5518
SANYO Semiconductors
DATA SHEET
CPH5518
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting.
The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and
the CPH3216, respectively.
Ultrasmall package facilitate miniaturization in end products (0.9mm mounting height).
( ) : PNP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Marking: EN
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (600mm20.8mm) 1unit
Mounted on a ceramic board (600mm20.8mm)
Ratings
(--50)80
(--)50
(--)5
(--)1.0
(--)3.0
(--)200
0.9
1.2
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22807EA TI IM TC-00000532 No. A0492-1/5


Sanyo Electric Components Datasheet

CPH5518 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

CPH5518
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwideth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
VCB=(--)10V, f=1MHz
VCE(sat)
IC=(--)500mA, IB=(--)10mA
IC=(--)300A, IB=(--)6mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--)500mA, IB=(--)10mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
200
(--50)80
(--)50
(--)5
420
(9)6
(--230)
130
(--125)
90
(--)0.81
(36)38
(173)332
(28)40
max
(--)0.1
(--)0.1
560
(--380)
190
(--200)
135
(--)1.2
Unit
µA
µA
MHz
pF
mV
mV
mV
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7017A-009
2.9
5 43
0.15
0.05
Electlical Connection
54 3
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
1
0.95
2
0.4
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
1 2 Top view
SANYO : CPH5
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
+
470µF
OUTPUT
RL=24
VBE= --5V
VCC=25V
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed.)
No. A0492-2/5


Part Number CPH5518
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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CPH5518 Datasheet PDF





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