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Sanyo Electric Components Datasheet

CPH5524 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENA0859A
CPH5524
SANYO Semiconductors
DATA SHEET
CPH5524
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers, IGBT gate drivers
Features
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting
Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)
Specications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on a ceramic board (600mm2×0.8mm) 1unit
Mounted on a ceramic board (600mm2×0.8mm)
Ratings
(--50)100
(--)50
(--)6
(--)3
(--)6
(--)600
0.9
1.2
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7017A-009
2.9
5 43
CPH5524-TL-E
0.15
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0.05
1
0.95
2
0.4
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
SANYO : CPH5
TL
Electrical Connection
543
12
http://semicon.sanyo.com/en/network
62012 TKIM/92607EA TIIM TC-00000913 No. A0859-1/8


Sanyo Electric Components Datasheet

CPH5524 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

No Preview Available !

CPH5524
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
INPUT
50Ω
VR
RB
+
100μF
VBE= --5V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
OUTPUT
RL
+
470μF
VCC=25V
Ratings
min typ
200
(--50)100
(--)50
(--)6
(390)380
(24)13
(--115)
90
(--240)
160
(--)0.88
(30)35
(230)300
(18)25
max
(--)1
(--)1
560
(--230)
130
(--650)
240
(--)1.2
Unit
μA
μA
MHz
pF
mV
mV
mV
mV
V
V
V
V
ns
ns
ns
Ordering Information
Device
CPH5524-TL-E
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb Free
No. A0859-2/8


Part Number CPH5524
Description PNP/NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
PDF Download

CPH5524 Datasheet PDF






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