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CPH5541 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENN8223
CPH5541
CPH5541 PNP / NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
Applications
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
PW10µs
Mounted on a ceramic board (600mm2!0.8m)
Ratings
(--30)40
(--30)30
(--)5
(--)700
(--)3
0.6
150
--55 to +150
Unit
V
V
V
mA
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Marking : EJ
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)30V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--10)50mA
VCE=(--)2V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)200mA, IB=(--)10mA
IC=(--)200mA, IB=(--)10mA
IC=(--)10µA, IE=0
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0
min
(200)300
(--30)40
(--)30
(--)5
Ratings
typ
max
Unit
(--)100 nA
(--)100 nA
(500)800
(520)540
MHz
(4.7)3.3
pF
(--110)85 (--220)190 mV
(--)0.9
(--)1.2
V
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21005EA TS IM TB-00001169 No.8223-1/5


Sanyo Electric Components Datasheet

CPH5541 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

CPH5541
Continued from preceding page.
Parameter
Turn-ON Time
Storage Time
Fall Time
Symbol
ton
tstg
tf
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit
Ratings
min typ max
35
(125)255
(25)40
Package Dimensions
unit : mm
2218
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
1 : Collector1
2 : Collector2
3 : Base2
4 : Emitter Common
5 : Base1
SANYO : CPH5
Electrical Connection
543
12
1 : Collector1
2 : Collector2
3 : Base2
4 : Emitter Common
5 : Base1
Top view
Unit
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50
++
220µF
470µF
VBE= --5V
VCC=12V
20IB1= --20IB2=IC=300mA
For PNP, minus sign is omitted.
IC -- VCE
[PNP]
--700
--600
--30mA--25mA --20mA--15mA
--10mA
--500 --7mA
--5mA
--400 --3mA
--2mA
--300
--1mA
--200
--500µA
--100
0 IB=0
0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV IT05049
IC -- VCE
[NPN]
700
600
10mA
7mA
5mA
500 3mA
2mA
400
1mA
300
200 400µA
200µA
100
IB=0
0
0 100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, VCE -- mV IT05082
No.8223-2/5


Part Number CPH5541
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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