Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4.
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Ordering number : ENN7409
CPH5819
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH5819
DC / DC Converter Applications
Features
•
Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] 1 • Short reverse recovery time. 0.95 • Low forward voltage.
[CPH5819]
3
0.6 0.2
0.15
2 0.4
0.6
1.6
2.8
0.05
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.2
0.