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Sanyo Electric Components Datasheet

CPH5821 Datasheet

General Purpose Switching Device Applications

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Ordering number : ENN7701
CPH5821
CPH5821
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose
Switching Device Applications
Features
DC / DC converter applications.
Composite type with a P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS004)
contained in one package facilitating high-density mounting.
[MOSFET]
4V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QX
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--30
±20
--2
--8
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61504 TS IM TA-100874 No.7701-1/5


Sanyo Electric Components Datasheet

CPH5821 Datasheet

General Purpose Switching Device Applications

No Preview Available !

CPH5821
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGSS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--500mA, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
IS=--2A, VGS=0
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
min typ max
Unit
--30
--1.2
1.2 2.0
110
205
200
47
32
7.2
2.9
21
8.7
5.5
0.98
0.82
--0.85
V
--1 µA
±10 µA
--2.6 V
S
145 m
290 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
15 V
0.30
0.35 V
0.35
0.40 V
500 µA
42 pF
15 ns
Package Dimensions
unit : mm
2171
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5 43
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.7701-2/5


Part Number CPH5821
Description General Purpose Switching Device Applications
Maker Sanyo Semicon Device
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CPH5821 Datasheet PDF






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