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Sanyo Electric Components Datasheet

CPH5901 Datasheet

High-Frequency Amplifier

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Ordering number : ENN8278A
CPH5901
CPH5901
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
High-Frequency Amplifier. AM Amplifier.
Features
Low-Frequency Amplifier Applications
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly.
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one
package.
Common drain and emitter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Marking : 1A
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on a ceramic board (600mm20.8mm)
Mounted on a ceramic board (600mm20.8mm)
Mounted on a ceramic board (600mm20.8mm)
Ratings
Unit
15 V
--15 V
10 mA
50 mA
350 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
350 mW
500
150
--55 to +150
mW
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705 No.8278-1/6
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

CPH5901 Datasheet

High-Frequency Amplifier

No Preview Available !

www.DataSheet.co.kr
CPH5901
Electrical Characteristics at Ta=25°C
Parameter
[FET]
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10μA, VDS=0V
VGS=--10V, VDS=0V
VDS=5V, ID=100μA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=35V, IE=0A
VEB=4V, IC=0A
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
* : The CPH5901 is classified by IDSS as follows : (unit : mA)
Rank
F
G
IDSS
6.0 to 12.0 10.0 to 20.0
Ratings
min typ max
Unit
--15 V
--1.0 nA
--0.2 --0.6 --1.4 V
6.0* 20.0* mA
25 50
mS
10 pF
3.0 pF
1.5 dB
135
200
1.7
0.08
0.8
55
50
6
0.15
0.75
0.20
0.1 μA
0.1 μA
400
MHz
pF
0.4 V
1.0 V
V
V
V
μs
μs
μs
Package Dimensions
unit : mm
7017-007
0.4
5 43
0.15
0.05
1
0.95
2.9
2
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Electrical Connection
54 3
12
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
Top view
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
50Ω
IB1
IB2
RB
+
220μF
+
470μF
OUTPUT
RL
VBE= --5V
VCC=20V
10IB1= --10IB2= IC=10mA
No.8278-2/6
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH5901
Description High-Frequency Amplifier
Maker Sanyo Semicon Device
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CPH5901 Datasheet PDF






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