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Sanyo Electric Components Datasheet

CPH5902 Datasheet

Low-Frequency Amplifier Applications

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Ordering number : ENN6962A
CPH5902
CPH5902
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly.
The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Ratings
Unit
15 V
--15 V
10 mA
50 mA
350 mW
55 V
50 V
6V
150 mA
300 mA
30 mA
350 mW
500
150
--55 to +150
mW
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-101143 / 52501 TS IM TA-G3I24IM7 No.6962-1/6


Sanyo Electric Components Datasheet

CPH5902 Datasheet

Low-Frequency Amplifier Applications

No Preview Available !

CPH5902
Electrical Characteristics at Ta=25°C
Parameter
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : RB
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1k, ID=1mA, f=1kHz
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min typ max
Unit
--15
--0.4
10.0*
24
--0.7
38
10.0
2.9
1.0
--1.0
--1.5
32.0*
V
nA
V
mA
mS
pF
pF
dB
0.1 µA
0.1 µA
135 400
200 MHz
1.7 pF
0.08
0.4 V
0.8 1.0 V
55 V
50 V
6V
0.15
µs
0.75
µs
0.20
µs
* : The CPH5902 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or transistor.
Package Dimensions
unit : mmm
2196
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
Electrical Connection
5 43
12
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
Top view
No.6962-2/6


Part Number CPH5902
Description Low-Frequency Amplifier Applications
Maker Sanyo Semicon Device
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CPH5902 Datasheet PDF






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