Ordering number : ENA1079
NPN Epitaxial Planar Silicon Transistor
• High gain : ⏐S21e⏐2=11dB typ (f=1GHz).
• High cutoff frequency : fT=6.7GHz typ.
• Small and slim 6-pin package.
• Large allowable collector dissipation (800mW max).
Absolute Maximum Ratings at Ta=25°C
When mounted on ceramic substrate (250mm2✕0.8mm)
--55 to +150
Electrical Characteristics at Ta=25°C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : GA
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the performance, characteristics, and functions of the described products in the independent state, and are not
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O2109AB TK IM TC-00002102 No. A1079-1/6
Datasheet pdf - http://www.DataSheet4U.net/