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Sanyo Electric Components Datasheet

CPH6354 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA1946
CPH6354
SANYO Semiconductors
DATA SHEET
CPH6354
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=77mΩ(typ.)
4V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1500mm2×0.8mm)
Ratings
--60
±20
--4
--16
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
0.15
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network
N0211PE TKIM TC-00002651 No. A1946-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

CPH6354 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
CPH6354
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--20V, f=1MHz
See specied Test Circuit.
VDS=--30V, VGS=--10V, ID=--4A
IS=--4A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --30V
ID= --2A
RL=15Ω
D VOUT
CPH6354
P.G 50Ω S
min
--60
Ratings
typ
--1.2
4.8
77
96
103
600
60
50
5.8
12
78
40
14
1.6
3.4
--0.84
max
--1
±10
--2.6
100
135
145
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ID -- VDS
--4.0
--3.5 --3.0V
--3.0
--2.5
--2.0
--1.5 VGS= --2.5V
--1.0
--0.5
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT16614
--8
--7
--6
--5
--4
--3
--2
--1
0
0
ID -- VGS
VDS= --10V
--1 --2 --3 --4 --5 --6
Gate-to-Source Voltage, VGS -- V IT16615
No. A1946-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH6354
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH6354 Datasheet PDF






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