900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Sanyo Electric Components Datasheet

CPH6605 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

www.DataSheet4U.com
Ordering number : ENN7183
CPH6605
N-Channel and P-Channel Silicon MOSFETs
CPH6605
Load Switching Applications
Features
Package Dimensions
Dual chip device for high-density mounting.
One of the encapsulated devices is a P-channel MOSFET
featuring low ON-resistance and high-speed switching.
The other is an N-channel small signal MOSFET used
for driving the P-channel MOSFET.
Optimal for load switch use.
Excellent ON-resistance characteristic.
2.5V drive.
unit : mm
2202
6
2.9
54
[CPH6605]
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
N-channel
P-channel
30 --20
±10 ±10
0.65 --1.5
2.6 --6.0
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FQ
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
0.4 1.3 V
400 560
mS
0.9 1.2
1.2 1.7
2.6 5.2
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-10G0I11IM8 No.7183-1/6


Sanyo Electric Components Datasheet

CPH6605 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

CPH6605
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4V
ID=--400mA, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0
Electrical Connection
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1 2 3 Top view
Ratings
min typ max
Unit
30 pF
15 pF
10 pF
32 ns
110 ns
250 ns
160 ns
2.34 nC
0.38 nC
0.45 nC
0.8 1.2 V
--20
--0.4
1.6 2.3
180
240
290
40
25
10
35
32
27
3.2
0.8
0.6
--0.82
V
--1 µA
±10 µA
--1.3 V
S
235 m
340 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
Switching Time Test Circuit
[N-channel]
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=150mA
RL=100
D VOUT
CPH6605
P.G 50S
[P-channel]
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --10V
ID= --800mA
RL=12.5
D VOUT
CPH6605
P.G 50S
No.7183-2/6


Part Number CPH6605
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
PDF Download

CPH6605 Datasheet PDF





Similar Datasheet

1 CPH6602 Ultrahigh-speed Switching
Sanyo Semiconductor Corporation
2 CPH6605 N-Channel and P-Channel Silicon MOSFETs
Sanyo Semicon Device





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy