Ordering number : ENN7183
N-Channel and P-Channel Silicon MOSFETs
Load Switching Applications
• Dual chip device for high-density mounting.
One of the encapsulated devices is a P-channel MOSFET
featuring low ON-resistance and high-speed switching.
The other is an N-channel small signal MOSFET used
for driving the P-channel MOSFET.
• Optimal for load switch use.
• Excellent ON-resistance characteristic.
• 2.5V drive.
unit : mm
Absolute Maximum Ratings at Ta=25°C
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : CPH6
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FQ
min typ max
0.4 1.3 V
0.9 1.2 Ω
1.2 1.7 Ω
2.6 5.2 Ω
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-10G0I11IM8 No.7183-1/6