CPH6605
Features
- Package Dimensions
- -
- Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used for driving the P-channel MOSFET. Optimal for load switch use. Excellent ON-resistance characteristic. 2.5V drive.
[CPH6605]
6 5 4 0.6 0.05 1.6 2.8 0.2
P-channel -20 ±10 --1.5 --6.0 0.8 150 --55 to +150
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ±10 0.65 2.6
0.7 0.9
3 0.95
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : CPH6
Unit V V A A W °C °C
Electrical Characteristics...
