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Sanyo Electric Components Datasheet

CPH6614 Datasheet

N-Channel and P-Channel Silicon MOSFETs

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Ordering number : ENN8068
CPH6614
CPH6614
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
Ultrahigh-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
Best suited for load switches.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=0.5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
30 --30
±20 ±20
1.8 --1.2
7.2 --4.8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
0.78
1.3
S
150 195 m
290 410 m
95 pF
22 pF
16 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1004PE TS TB-00000656 No.8068-1/6


Sanyo Electric Components Datasheet

CPH6614 Datasheet

N-Channel and P-Channel Silicon MOSFETs

No Preview Available !

CPH6614
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=1.8A
VDS=10V, VGS=10V, ID=1.8A
VDS=10V, VGS=10V, ID=1.8A
IS=1.8A, VGS=0
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.6A
ID=--0.6A, VGS=--10V
ID=--0.3A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--1.2A
VDS=--10V, VGS=--10V, ID=--1.2A
VDS=--10V, VGS=--10V, ID=--1.2A
IS=--1.2A, VGS=0
Ratings
min typ max
Unit
6.2 ns
4.5 ns
13 ns
6.4 ns
3.2 nC
0.74
nC
0.42
nC
0.93
1.2 V
--30
--1.2
0.6 1.0
320
590
104
22
17
12.5
24
12
12.2
3.3
0.48
0.45
--0.91
V
--1 µA
±10 µA
--2.6 V
S
420 m
830 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
Package Dimensions
unit : mm
2238
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
Electrical Connection
6 5 4 1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
1 23
Top view
No.8068-2/6


Part Number CPH6614
Description N-Channel and P-Channel Silicon MOSFETs
Maker Sanyo Semicon Device
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CPH6614 Datasheet PDF






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