* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
D1876
Sanyo Semicon Device
110.80 KB
2sd1876.
Ordering number:EN2423 NPN Triple Diffused Planar Silicon Transistor 2SD1876 Color TV Horizontal Deflection Output Applications Applications C.
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