* High speed (tf=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter
D1884
Sanyo Semicon Device
117.38 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN2431 NPN Triple Diffused Planar Silicon Transistor 2SD1884 Color TV Horizontal Deflection Output Applications Applications C.
📁 Related Datasheet
D188 2SD188 (SavantIC)
D1880 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1881 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1882 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1883 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semiconductor Corporation)
D1885 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semiconductor Corporation)
D1886 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1886C NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1887 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
D1888 2SD1888 (SavantIC)
