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Sanyo Electric Components Datasheet

D2578 Datasheet

2SD2578

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D2578 pdf
www.DaOtradSerhinegent4uUm.bceor:m5794
Features
· High speed.
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
NPN Triple Diffused Planar Silicon Transistor
2SD2578
Color TV Horizontal Deflection
Output Applications
Package Dimensions
unit:mm
2039D
[2SD2578]
16.0
3.4
5.6
3.1
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1:Base
2:Collector
3:Emitter
SANYO:TO3PML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditons
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
Ratings
1500
800
6
8
20
3.0
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
10 µA
1.0 mA
800 V
40 130 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3098TS (KOTO) TA-1135 No.5794-1/4


Sanyo Electric Components Datasheet

D2578 Datasheet

2SD2578

No Preview Available !

D2578 pdf
www.DataSheet4U.com
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
2SD2578
Symbol
Conditons
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
IC=5A, IB=1A
IC=5A, IB=1A
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=4A, IB1=0.8A, IB2=–1.6A
Switching Time Test Circuit
PW=20µs
DC1%
INPUT
50
IB1
IB2
RB
VR
+
100µF
VBE=–2V
OUTPUT
+
470µF
RL=50
VCC=200V
Ratings
min typ
15
5
max
5
1.5
30
8
0.3
Unit
V
V
µs
8 I C - VCE
7
1.4A 1.6A 1.8A
2.0A
6
1.2A
1.0A
0.8A
5 0.6A
4 0.4A
3 0.2A
2
1
0 IB= 0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
5 hFE - I C
3
2
Ta = 120˚C
25˚C
10 -40˚C
7
5
VCE= 5V
3
2
1.0
77 0.1
2 3 5 7 1.0
23
Collector Current, IC – A
5 7 10
9 I C - VBE
VCE= 5V
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V
7
5
IC/ IB= 5
VCE(sat) - I C
3
2
1.4
1.0
7
5
3
2
Ta= -40˚C
0.1 25˚C
7
5 120˚C
37 0.1
2 3 5 7 1.0
23
Collector Current, IC – A
5 7 10
No.5794-2/4


Part Number D2578
Description 2SD2578
Maker Sanyo Semicon Device
Total Page 4 Pages
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