D2627 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	D2627
Manufacturer	Sanyo Semicon Device
File Size	27.83 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	D2627_SanyoSemiconDevice.pdf

High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Package Dimensions unit : mm 2079C 10.0 3.2 [2SD2627] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 14.0 0.75 1 23 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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Published: Oct 10, 2006 |