D600 - 2SD600

Features

High breakdown voltage VCEO 100/120V, High current 1A.
Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg t.

Sanyo Semicon Device

Datasheet Details

Part number	D600
Manufacturer	SANYO
File Size	203.25 KB
Description	2SD600
Datasheet	D600 Datasheet
Additional preview pages of the D600 datasheet.

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Full PDF Text Transcription

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent h FE linearity.

Published: May 30, 2014 |