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Sanyo Electric Components Datasheet

EC4406C Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA0941
EC4406C
SANYO Semiconductors
DATA SHEET
EC4406C
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
1.5V drive.
Halogen Free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on glass epoxy substrate (145mm80mm1.6mm)
Electrical Characteristics at Ta=25°C
Ratings
60
±10
200
800
0.15
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=100mA
ID=100mA, VGS=4V
ID=50mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
60
0.4
280
Ratings
typ
max
Unit
V
1 μA
±10 μA
1.3 V
480 mS
2.2 2.9 Ω
2.4 3.4 Ω
3.5 7.0 Ω
26 pF
5.9 pF
3.2 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11608PE TI IM TC-00001132 No. A0941-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

EC4406C Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
EC4406C
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
IS=200mA, VGS=0V
Ratings
min typ max
Unit
18.5
ns
26 ns
146 ns
69 ns
1.0 nC
0.2 nC
0.2 nC
0.83
1.2 V
Package Dimensions
unit : mm (typ)
7036-001
Top View
0.8
43
12
Polarity Discriminating Mark
Type No. Indication Electrical Connection
AP
Top view
Polarity mark (Top)
Gate
Source
Drain
*Electrodes : on the bottom
Top view
Polarity mark (Top)
Drain
0.5
0.2
12
43
Bottom View
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
Gate
Source
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=200mA
RL=150Ω
D VOUT
Rg
EC4406C
P.G 50Ω S
Rg=1.2kΩ
No. A0941-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number EC4406C
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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EC4406C Datasheet PDF






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