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Sanyo Electric Components Datasheet

ECH8419 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1886
ECH8419
SANYO Semiconductors
DATA SHEET
ECH8419
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=13mΩ (typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
35
±20
9
40
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
0.15
0 t o 0.02
1
0.65
4
0.3
Bot t om View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
KZ
Lot No.
TL
Electrical Connection
87 6 5
12 3 4
http://semicon.sanyo.com/en/network
20211PE TKIM TC-00002564 No. A1886-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8419 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8419
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=2.5A, VGS=4.5V
ID=2.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=20V, VGS=10V, ID=9A
VDS=20V, VGS=10V, ID=9A
VDS=20V, VGS=10V, ID=9A
IS=9A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=5A
RL=4Ω
D VOUT
ECH8419
P.G 50Ω S
min
35
Ratings
typ
1.2
4.3
13
21
27
960
130
80
13
26
66
31
19
3.9
3.8
0.85
max
1
±10
2.6
17
30
38
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
10 ID -- VDS
9
8
7
6 3.5V
5
4
3
2
VGS=3.0V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT15793
ID -- VGS
14
VDS=10V
12
10
8
6
4
2
0
012345
Gate-to-Source Voltage, VGS -- V IT15794
No. A1886-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8419
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
PDF Download

ECH8419 Datasheet PDF





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