ECH8419
Features
- -
- N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=13mΩ (typ.) 4V drive Halogen free pliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 35 ±20 9 40 1.5 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions unit : mm (typ) 7011A-002
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
Product & Package Information
- Package : ECH8
- JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
Lot No.
1 0.65
4 0.3
Electrical Connection
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
8 7 6 5
Bot t om View
SANYO : ECH8
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