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Sanyo Electric Components Datasheet

ECH8420 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8993
ECH8420
SANYO Semiconductors
DATA SHEET
ECH8420
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=5.2mΩ (typ.)
1.8V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±12
14
50
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
0.15
0 t o 0.02
1
0.65
4
0.3
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
ZA
Lot No.
TL
Electrical Connection
Bot t om View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
87 6 5
12 3 4
http://semicon.sanyo.com/en/network
O1911PE TKIM TC-00002660 No.8993-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ECH8420 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ECH8420
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=4.5V
ID=4A, VGS=2.5V
ID=2A, VGS=1.8V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=14A
IS=14A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=7A
RL=1.43Ω
D VOUT
ECH8420
P.G 50Ω S
min
20
Ratings
typ
0.4
14.5
5.2
8
15
2430
410
330
21
88
210
115
29
4.8
8.7
0.75
max
1
±10
1.3
6.8
11.5
22.5
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
14 ID -- VDS
12
10
8
6
4 VGS=1.5V
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16625
21
20 VDS=10V
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 0.2 0.4
ID -- VGS
0.6 0.8 1.0 1.2
1.4
Gate-to-Source Voltage, VGS -- V
1.6 1.8
IT16531
No.8993-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ECH8420
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8420 Datasheet PDF






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