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Sanyo Electric Components Datasheet

ECH8611 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENN8127
ECH8611
ECH8611
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board(900mm2!0.8mm)1unit
Mounted on a ceramic board(900mm2!0.8mm)
Ratings
--12
±9
--5
--40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID= --1mA, VGS=0
VDS= --12V, VGS=0
VGS=±7.2V, VDS=0
VDS= --6V, ID= --1mA
VDS= --6V, ID= --2.5A
ID= --2A, VGS= --4.5V
ID= --1A, VGS= --2.5V
ID= --0.5A, VGS= --1.8V
VDS= --6V, f=1MHz
VDS= --6V, f=1MHz
VDS= --6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--12
--0.3
6.6
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.0 V
9.5 S
30 40 m
45 65 m
66 95 m
1230
pF
380 pF
330 pF
16 ns
190 ns
110 ns
120 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21005PE TS IM TA-100402 No.8127-1/4


Sanyo Electric Components Datasheet

ECH8611 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2206B
0.3
8
5
1
0.65
2.9
4
ECH8611
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS= --6V, VGS= --4.5V, ID= --5A
VDS= --6V, VGS= --4.5V, ID= --5A
VDS= --6V, VGS= --4.5V, ID= --5A
IS= --5A, VGS=0
Ratings
min typ max
Unit
12 nC
1.5 nC
3.7 nC
--0.85
--1.5 V
Electrical Connection
0.15
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
87 6 5
12 3 4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --3A
RL=2
D VOUT
ECH8611
P.G 50S
No.8127-2/4


Part Number ECH8611
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8611 Datasheet PDF






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