Ordering number : EN8258A
N-Channel Silicon MOSFET
ECH8612 General-Purpose Switching Device
• Low ON-resistance.
• Best suited for load switches.
• 1.8V drive.
• Composite type, facilitating high-density mounting.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Marking : FE
18 24 mΩ
25 36 mΩ
35 52 mΩ
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