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Sanyo Electric Components Datasheet

ECH8612 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8258A
ECH8612
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8612 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Best suited for load switches.
1.8V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±8
7
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3A, VGS=4.5V
ID=1.5A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
20
0.4
6.6
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.2 V
11 S
18 24 m
25 36 m
35 52 m
920 pF
150 pF
120 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 52506 MS IM TB-00002337 / 32505PE TS IM TB-00000442 No.8258-1/4


Sanyo Electric Components Datasheet

ECH8612 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

ECH8612
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=7A
VDS=10V, VGS=4.5V, ID=7A
VDS=10V, VGS=4.5V, ID=7A
IS=7A, VGS=0V
Ratings
min typ max
Unit
14 ns
170 ns
100 ns
98 ns
12 nC
1.3 nC
3.7 nC
0.83
1.2 V
Package Dimensions
unit : mm
7011A-001
Top View
2.9
85
0.15
0 to 0.02
1
0.65
4
0.3
Electrical Connection
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
1 2 3 4 8 : Drain1
Top view
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=3.5A
RL=2.86
D VOUT
ECH8612
P.G 50S
No.8258-2/4


Part Number ECH8612
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8612 Datasheet PDF






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