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Sanyo Electric Components Datasheet

ECH8613 Datasheet

High-Speed Switching Applications

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Ordering number : ENN7780
ECH8613
ECH8613
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
P-Channel Silicon MOSFET
High-Speed Switching Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--12
±10
--5
--40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FF
V(BR)DSS
IDSS1
IDSS2
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0
VDS=--4V, VGS=0
VDS=--12V, VGS=0
VGS=±8V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2.5A
ID=--2A, VGS=--5V
ID=--1A, VGS=--4.5V
ID=--0.5A, VGS=--2.5V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
min
--12
--0.4
5.5
Ratings
typ
max
Unit
V
--1 µA
--10 µA
±10 µA
--1.4 V
9.3 S
26 33 m
28 37 m
43 60 m
1165
pF
320 pF
265 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504 TS IM TA-101131 No.7780-1/4


Sanyo Electric Components Datasheet

ECH8613 Datasheet

High-Speed Switching Applications

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2206B
0.3
8
5
ECH8613
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--5V, ID=--5A
VDS=--6V, VGS=--5V, ID=--5A
VDS=--6V, VGS=--5V, ID=--5A
IS=--5A, VGS=0
0.15
Ratings
min typ max
Unit
12 ns
340 ns
100 ns
130 ns
9.5 nC
2.1 nC
1.4 nC
0.83
--1.5 V
1
0.65
2.9
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
87 6 5
12 3 4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
Switching Time Test Circuit
VIN
0V
--5V
VIN
PW=10µs
D.C.1%
G
VDD= --6V
ID= --3A
RL=2
D VOUT
ECH8613
P.G 50S
No.7780-2/4


Part Number ECH8613
Description High-Speed Switching Applications
Maker Sanyo Semicon Device
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ECH8613 Datasheet PDF






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